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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. september 2008 rev 1 1/12 12 std6n52k3 STF6N52K3 n-channel 525 v, 1 ? , 5 a, dpak, to-220fp supermesh3? power mosfet features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitances improved diode reverse recovery characteristics zener-protected application switching applications description the new supermesh3? series is obtained through the combination of a further fine tuning of st's well established strip-based powermesh? layout with a new optimization of the vertical structure. in addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. figure 1. internal schematic diagram type v dss r ds(on) max i d pw std6n52k3 525 v < 1.2 ? 5 a 70 w STF6N52K3 525 v < 1.2 ? 5 a (1) 1. limited by package 25 w 1 3 dpak to-220fp 1 2 3 table 1. device summary order codes marking package packaging std6n52k3 6n52k3 dpak tape and reel STF6N52K3 6n52k3 to-220fp tube www.st.com
contents std6n52k3 - STF6N52K3 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
std6n52k3 - STF6N52K3 electrical ratings 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220fp v ds drain-source voltage (v gs = 0) 525 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 5 5 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 3.15 3.15 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 20 20 (1) a p tot total dissipation at t c = 25 c 70 25 w derating factor 0.56 0.2 w/c dv/dt (3) 3. i sd 6.3 a, di/dt = tbd, v dd = 80% v (br)dss. peak diode recovery voltage slope 9 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) -- 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter dpak to-220fp unit r thj-case thermal resistance junction-case max 1.79 5 c/w r thj-pcb thermal resistance junction-pcb max 50 -- c/w r thj-amb thermal resistance junction-ambient max -- 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) tbd a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) tbd mj
electrical characteristics std6n52k3 - STF6N52K3 4/12 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 525 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 30 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 2.5 a 1.0 1.2 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v, i d = 2.5 a tbd s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 tbd tbd tbd pf pf pf c oss eq (1) 1. c oss eq . is defined as a constant equivalent capacitance giving the same charging time as c oss when v d s increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 240 v tbd pf r g intrinsic gate resistance f = 1 mhz open drain tbd ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 240 v, i d = 5 a, v gs = 10 v (see figure 3 ) tbd tbd tbd nc nc nc table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 150 v, i d = 3.15 a, r g = 4.7 ?, v gs = 10 v (see figure 2 ) tbd tbd tbd tbd ns ns ns ns
std6n52k3 - STF6N52K3 electrical characteristics 5/12 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 6.3 25 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 60 v (see figure 7 ) tbd tbd tbd ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 7 ) tbd tbd tbd ns nc a table 9. gate-source zener diode symbol parameter test conditions min typ max unit bv gso (1) 1. the built-in back-to-back zener diodes have specif ically been designed to enhanc e not only the device?s esd capability, but also to make th em safely absorb possible voltage tr ansients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protec t the device?s integrity. these int egrated zener diodes thus avoid the usage of external components gate-source breakdown voltage igs= 1 ma (open drain) 30 v
test circuits std6n52k3 - STF6N52K3 6/12 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform
std6n52k3 - STF6N52K3 package mechanical data 7/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data std6n52k3 - STF6N52K3 8/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.17 3 0.1 8 1 b 2.5 2.7 0.0 98 0.106 d 2.5 2.75 0.0 98 0.10 8 e 0.45 0.70 0.017 0.027 f 0.75 1.00 0.0 3 00.0 39 f1 1.15 1.50 0.045 0.067 f2 1.15 1.50 0.045 0.067 g4. 9 55.200.1 9 50.204 g1 2.40 2.70 0.0 9 4 0.106 h 10 10.40 0. 393 0.40 9 l2 16 0.6 3 0 l 3 2 8 .6 3 0.6 1.126 1.204 l4 9 . 8 0 10.60 0. 38 5 0.417 l5 2. 93 .6 0.114 0.141 l6 15. 9 0 16.40 0.626 0.645 l7 99 . 3 00. 3 54 0. 3 66 di a3 3 .2 0.11 8 0.126 to-220fp mechanical data l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 7012510-i di a
std6n52k3 - STF6N52K3 package mechanical data 9/12 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
package mechanical data std6n52k3 - STF6N52K3 10/12 5 package mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
std6n52k3 - STF6N52K3 revision history 11/12 6 revision history table 10. document revision history date revision changes 03-sep-2008 1 initial release
std6n52k3 - STF6N52K3 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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